DMN65D8LFB-7B【PDF 3/5 页】MOSF N CH 60V 260MA X1-DFN1006-3

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DMN65D8LFB

0.6

V GS =10V

V GS =3.5V

1

V DS = 5.0V

T A =125 ° C

T A =150 ° C

0.5

0.4

V GS =5.0V

V GS =4.0V

V GS =4.5V

V GS =3.0V

T A =25 ° C

T A =-55 ° C

0.3

0.2

0.1

V GS =2.5V

0.1

T A =85 ° C

0.0

0

0.5 1 1.5 2 2.5 3 3.5 4 4.5

5

0.01

0

0.5

1 1.5 2 2.5 3 3.5

4

5

V DS , DRAIN-SOURCE VOLTAGE (V)

Fig.1 Typical Output Characteristics

2.4

V GS , GATE-SOURCE VOLTAGE

Fig. 2 Typical Transfer Characteristics

4.5

4

3.5

2.2

2

1.8

V GS =10V,

I D =115mA

3

2.5

2

1.5

1

0.5

V GS =5V

V GS =10V

1.6

1.4

1.2

1

0.8

0.6

V GS =5V,

I D =115mA

0

0

0.1 0.2 0.3 0.4 0.5

I D , DRAIN-SOURCE CURRENT (A)

Fig. 3 Typical On-Resistance vs.

0.6

0.4

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE ( ° C)

Fig. 4 On-Resistance Variation with Temperature

Drain Current and Gate Charge

2

1.8

1.6

50

45

40

f=1MHz

1.4

I D =1mA

35

1.2

1

0.8

0.6

0.4

0.2

I D =250μA

30

25

20

15

10

5

C ISS

C OSS

0

-50

-25 0 25 50 75 100 125 150

0

0

5 10 15 20

C RSS

25

TJ, JUNCTION TEMPERATURE (°C)

Fig. 5 Gate Threshold Variation vs. Ambient Temperature

V DS , DRAIN-SOURCE VOLTAGE

Fig. 6 Typical Junction Capacitance

DMN65D8LFB

Document number: DS35449 Rev. 2 - 2

3 of 5

www.diodes.com

November 2011

? Diodes Incorporated

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